Analytical modeling and simulation of multigate FinFET devices and the impact of high-k dielectrics on short channel effects (SCEs)

Statistics of the Recombinations of Holes and Electrons

W. Shockley, W. T. Read · Physical Review · 1952 · 6.3K citations

Semiconductors, Electrical Engineering, Engineering +14

Electron-Hole Recombination in Germanium

R. N. Hall · Physical Review · 1952 · 2.7K citations

Atomic Physics, Electron Spectroscopy, Physics +1

Scaling the Si MOSFET: from bulk to SOI to bulk

Ran Yan, A. Ourmazd, K.F. Lee · IEEE Transactions on Electron Devices · 1992 · 886 citations

Electrical Engineering, Engineering, Vlsi Design +11

A physically based mobility model for numerical simulation of nonplanar devices

C. Lombardi, Stefano Manzini, Antonio Saporito et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1988 · 802 citations

Engineering, Semiempirical Model, Computer-aided Design +26

Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Massimo V. Fischetti, Deborah A. Neumayer, E. Cartier · Journal of Applied Physics · 2001 · 735 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +20