Transit-time Devices

Transit-Time Devices is a class of high-frequency semiconductor devices in which the fundamental mechanism of operation relies on the precise control and utilization of the time required for charge carriers to traverse a defined region within the semiconductor material.

77

Publications

3.8K

Citations

187

Authors

77

Institutions

Publications per year

2017–2026

6

Authors

187

  1. GW
    G.T. Wright

    University of Birmingham, United Kingdom

    5 publications · 91 citations

    5

    h-index

  2. GH
    G.I. Haddad

    University of Michigan, United States

    5 publications · 158 citations

    5

    h-index

  3. AA
    Aritra Acharyya

    University of Calcutta, India

    4 publications · 66 citations

    4

    h-index

  4. MM
    Moumita Mukherjee

    Adamas University, India

    4 publications · 97 citations

    4

    h-index

  5. ME
    M.E. Elta

    University of Michigan, United States

    4 publications · 98 citations

    4

    h-index

1–5 of 187

Venues

  1. IEEE Transactions on Electron Devices

    11 publications · 1.3K citations

    11

    h-index

  2. Solid-State Electronics

    9 publications · 228 citations

    9

    h-index

  3. Electronics Letters

    7 publications · 170 citations

    7

    h-index

  4. Proceedings of the IRE

    5 publications · 799 citations

    5

    h-index

  5. Applied Physics Letters

    4 publications · 158 citations

    4

    h-index

1–5