Aritra Acharyya

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Aritra Acharyya, J. P. Banerjee · Applied Nanoscience · 2012 · 127 citations · Full text

Potentiality of IMPATT Devices as Terahertz Source: An Avalanche Response Time-based Approach to Determine the Upper Cut-off Frequency Limits

Aritra Acharyya, JP Banerjee · IETE Journal of Research · 2013 · 53 citations

Wide-bandgap Semiconductor, Terahertz Technology, Engineering +19

1.0 THz GaN IMPATT Source: Effect of Parasitic Series Resistance

Arindam Biswas, Sayantan Sinha, Aritra Acharyya et al. · Journal of Infrared Millimeter and Terahertz Waves · 2018 · 51 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5

Influence of skin effect on the series resistance of millimeter-wave IMPATT devices

Aritra Acharyya, Suranjana Banerjee, J. P. Banerjee · Journal of Computational Electronics · 2013 · 42 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +10

Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Aritra Acharyya, Suranjana Banerjee, J. P. Banerjee · Journal of Semiconductors · 2013 · 34 citations

Engineering, Radio Frequency, Particular Junction Temperature +17