Concepedia

Erase Cycling

Erase Cycling is a fundamental wear mechanism in solid-state storage characterized by the repeated process of erasing data from a block of non-volatile memory cells, which progressively degrades the oxide layers within the cells and limits the block's usable lifespan.

125

Publications

5.1K

Citations

576

Authors

140

Institutions

Publications per year

2017–2026

13

Parents

Publications

125

Organic electrical bistable devices and rewritable memory cells

L. P., J. Liu, Yong Suk Yang · Applied Physics Letters · 2002 · 479 citations

, , +17

Bit error rate in NAND Flash memories

Neal Mielke, Todd A. Marquart, Ning Wu et al. · 2008 · 358 citations

, , +17

Read Disturb Errors in MLC NAND Flash Memory: Characterization, Mitigation, and Recovery

Yu Cai, Yixin Luo, Saugata Ghose et al. · 2015 · 204 citations · Full text

, , +13

Highly Fluorescent Contrast for Rewritable Optical Storage Based on Photochromic Bisthienylethene-Bridged Naphthalimide Dimer

Guiyuan Jiang, Sheng Wang, Wenfang Yuan et al. · Chemistry of Materials · 2005 · 177 citations

, , +17

Flash EEPROM Threshold Instabilities due to Charge Trapping During Program/Erase Cycling

Neal Mielke, Hanmant Belgal, I. Kalastirsky et al. · IEEE Transactions on Device and Materials Reliability · 2004 · 170 citations

, , +17

1–5 of 125

Authors

576

  1. NM
    Neal Mielke

    Intel (United States), United States

    5 publications · 783 citations

    5

    h-index

  2. JV
    Jan Van Houdt

    IMEC, Belgium

    5 publications · 120 citations

    5

    h-index

  3. JG
    Jan Genoe

    IMEC, Belgium

    4 publications · 117 citations

    4

    h-index

  4. PH
    Paul Heremans

    IMEC, Belgium

    4 publications · 117 citations

    4

    h-index

  5. AV
    A. Visconti

    University of Padua, Italy

    3 publications · 50 citations

    3

    h-index

1–5 of 576

Institutions

140

  1. IMEC

    Leuven, Belgium

    10 h-index

    51 publications

    1.4K citations

  2. Intel (United States)

    Santa Clara, United States

    9 h-index

    41 publications

    5.6K citations

  3. Korea Advanced Institute of Science and Technology

    Daejeon, South Korea

    6 h-index

    16 publications

    221 citations

  4. Samsung (South Korea)

    Seoul, South Korea

    5 h-index

    17 publications

    257 citations

  5. IBM Research - Zurich

    Rüschlikon, Switzerland

    3 h-index

    13 publications

    410 citations

  6. Politecnico di Milano

    Milan, Italy

    3 h-index

    13 publications

    265 citations

  7. Hitachi (Japan)

    Tokyo, Japan

    3 h-index

    9 publications

    345 citations

  8. STMicroelectronics (Italy)

    Milan, Italy

    3 h-index

    6 publications

    162 citations

1–8 of 140

Venues

  1. IEEE Transactions on Electron Devices

    12 publications · 320 citations

    12

    h-index

  2. IEEE Electron Device Letters

    14 publications · 347 citations

    11

    h-index

  3. Applied Physics Letters

    10 publications · 724 citations

    10

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 7 publications · 197 citations

    7

    h-index

  5. 3

    h-index

1–5