Electrical Resistivity Reduction
Electrical Resistivity Reduction is a materials engineering phenomenon in which the electrical resistance of a thin film decreases as a result of structural and compositional modifications induced by annealing processes.
487
Publications
17.7K
Citations
2.1K
Authors
611
Institutions
Publications per year
2017–2026
104
Parents
487
Resistivity of chemical vapor deposited diamond films
M. I. Landstrass, K. V. Ravi · Applied Physics Letters · 1989 · 499 citations
Eric S. Toberer, Catherine A. Cox, Shawna R. Brown et al. · Advanced Functional Materials · 2008 · 328 citations
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IBM Research - Thomas J. Watson Research Center, United States
4 publications · 623 citations
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Shanghai Institute of Microsystem and Information Technology, China
4 publications · 183 citations
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University at Buffalo, State University of New York, United States
3 publications · 96 citations
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Chinese Academy of Sciences
Beijing, China
13 h-index
91 publications
3.3K citations
IBM (United States)
Armonk, United States
12 h-index
52 publications
1.4K citations

Centre National de la Recherche Scientifique
Paris, France
10 h-index
37 publications
1.1K citations

Tohoku University
Sendai, Japan
8 h-index
23 publications
1.1K citations
The University of Osaka
Osaka, Japan
7 h-index
17 publications
666 citations
Korea Advanced Institute of Science and Technology
Daejeon, South Korea
7 h-index
17 publications
429 citations
Seoul National University
Seoul, South Korea
7 h-index
28 publications
835 citations
The University of Tokyo
Tokyo, Japan
7 h-index
23 publications
682 citations
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40 publications · 1.8K citations
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31 publications · 1.6K citations
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29 publications · 874 citations
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JES · 13 publications · 584 citations
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JJAP · 13 publications · 330 citations
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