Electrical Resistivity Reduction

Electrical Resistivity Reduction is a materials engineering phenomenon in which the electrical resistance of a thin film decreases as a result of structural and compositional modifications induced by annealing processes.

487

Publications

17.7K

Citations

2.1K

Authors

611

Institutions

Publications per year

2017–2026

104

Authors

2.1K

  1. SM
    S. M. Rossnagel

    IBM Research - Thomas J. Watson Research Center, United States

    4 publications · 623 citations

    4

    h-index

  2. BL
    Bo Liu

    Chinese Academy of Sciences, China

    4 publications · 183 citations

    4

    h-index

  3. SF
    Songlin Feng

    Shanghai Institute of Microsystem and Information Technology, China

    4 publications · 183 citations

    4

    h-index

  4. BC
    Bomy Chen

    Silicon Labs (United States), United States

    4 publications · 183 citations

    4

    h-index

  5. DC
    D.D.L. Chung

    University at Buffalo, State University of New York, United States

    3 publications · 96 citations

    3

    h-index

1–5 of 2.1K

Venues

  1. Journal of Applied Physics

    40 publications · 1.8K citations

    23

    h-index

  2. Applied Physics Letters

    31 publications · 1.6K citations

    21

    h-index

  3. Thin Solid Films

    29 publications · 874 citations

    17

    h-index

  4. Journal of The Electrochemical Society

    JES · 13 publications · 584 citations

    13

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 13 publications · 330 citations

    11

    h-index

1–5