Concepedia

Dopant Deactivation

Dopant Deactivation is a semiconductor physics phenomenon in which dopant atoms, despite being incorporated into the crystal lattice, fail to contribute free charge carriers due to structural, thermal, or chemical effects that render them electrically inactive.

58

Publications

1.9K

Citations

262

Authors

87

Institutions

Publications per year

2017–2026

7

Parents

Publications

58

Complex Dynamical Phenomena in Heavily Arsenic Doped Silicon

M. Ramamoorthy, Sokrates T. Pantelides · Physical Review Letters · 1996 · 165 citations

, , +17

The solid solubility and thermal behavior of metastable concentrations of As in Si

A. Lietoila, J. F. Gibbons, T. W. Sigmon · Applied Physics Letters · 1980 · 142 citations

, , +17

Physical processes associated with the deactivation of dopants in laser annealed silicon

Yuzuru Takamura, Peter B. Griffin, J.D. Plummer · Journal of Applied Physics · 2002 · 134 citations

, , +17

Thermal stability of dopants in laser annealed silicon

Yayoi Takamura, S. H. Jain, Peter B. Griffin et al. · Journal of Applied Physics · 2002 · 83 citations

, , +17

Trap-Limited Migration of Si Self-Interstitials at Room Temperature

K. Kyllesbech Larsen, V. Privitera, S. Coffa et al. · Physical Review Letters · 1996 · 81 citations

, , +17

1–5 of 58

Authors

262

  1. JP
    J.D. Plummer

    Stanford University, United States

    5 publications · 329 citations

    5

    h-index

  2. PB
    Peter B. Griffin

    Stanford University, United States

    5 publications · 329 citations

    5

    h-index

  3. SS
    S. Solmi

    Institute for Microelectronics and Microsystems, Italy

    3 publications · 81 citations

    3

    h-index

  4. DN
    D. Nobili

    University of Bologna, Italy

    3 publications · 81 citations

    3

    h-index

  5. SL
    Sebania Libertino

    Institute for Microelectronics and Microsystems, Italy

    2 publications · 64 citations

    2

    h-index

1–5 of 262

Institutions

87

  1. Stanford University

    Stanford, United States

    7 h-index

    27 publications

    1.3K citations

  2. Institute for Microelectronics and Microsystems

    Catania, Italy

    3 h-index

    12 publications

    528 citations

  3. Philips (Netherlands)

    Amsterdam, The Netherlands

    3 h-index

    8 publications

    217 citations

  4. Vanderbilt University

    Nashville, United States

    3 h-index

    7 publications

    430 citations

  5. Western University

    London, Canada

    2 h-index

    5 publications

    276 citations

  6. Jülich Aachen Research Alliance

    Jülich, Germany

    2 h-index

    7 publications

    107 citations

  7. University of Münster

    Münster, Germany

    2 h-index

    3 publications

    45 citations

  8. Sandia National Laboratories

    Albuquerque, United States

    2 h-index

    6 publications

    166 citations

1–8 of 87

Venues

  1. Journal of Applied Physics

    12 publications · 422 citations

    12

    h-index

  2. Applied Physics Letters

    7 publications · 346 citations

    7

    h-index

  3. Journal of The Electrochemical Society

    JES · 5 publications · 148 citations

    5

    h-index

  4. Journal of Electronic Materials

    JEM · 3 publications · 52 citations

    3

    h-index

  5. Physical review. B, Condensed matter

    PRB · 2 publications · 75 citations

    2

    h-index

1–5