S. C. Chen

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

Cheng Yang, Yuanxing Fang, Chia‐Hung Chen et al. · Applied Physics Letters · 2003 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of germanium and carbon coimplants on phosphorus diffusion in silicon

Kai‐Wei Ku, C. F. Nieh, Jingjing Gong et al. · Applied Physics Letters · 2006 · 28 citations

Engineering, Materials Engineering, Materials Science +17

High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference

Chao‐Hsin Wu, B.F. Hung, Albert Chin et al. · 2006 · 27 citations

Engineering, Computer Engineering, Electrical Engineering +8

The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs

I. K. Chen, S. C. Chen, Subhadeep Mukhopadhyay et al. · 2018 · 17 citations

Engineering, Electrical Engineering, Electronic Materials +16

The physical explanation of TDDB power law lifetime model through oxygen vacancy trap investigations in HKMG NMOS FinFET devices

C. H. Yang, S. C. Chen, Y. S. Tsai et al. · 2017 · 16 citations

Engineering, Electrical Engineering, Materials Science +17