C. H. Yang

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Active since

2016

Affiliations

Taiwan Semiconductor Manufacturing Company (Taiwan)(Current)

C. H. Yang is an author at Taiwan Semiconductor Manufacturing Company (Taiwan) specializing in electronic materials, gate oxide degradation, and electrical engineering.

Publications per year

2016–2017

Publications

The physical explanation of TDDB power law lifetime model through oxygen vacancy trap investigations in HKMG NMOS FinFET devices

C. H. Yang, S. C. Chen, Y. S. Tsai et al. · 2017 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

The physical mechanism investigation between HK/IL gate stack breakdown and time-dependent oxygen vacancy trap generation in FinFET devices

C. H. Yang, S. C. Chen, Y. S. Tsai et al. · 2016 · 14 citations

Engineering, Electrical Engineering, Electronic Materials +16

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