High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference

Abstract

The authors report novel 1000degC-stable [Ir <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Phi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m-eff</sub> of 5.08 and 4.24 eV, low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> of -0.10 and 0.18 V, high mobility of 84 and 217 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs at 1.6 nm EOT, and small 85degC BTI <20 mV (10 MV/cm for 1 hr) are measured