Anyan Du

Phase change random access memory cell with superlattice-like structure

Tow Chong Chong, Luping Shi, Rong Zhao et al. · Applied Physics Letters · 2006 · 243 citations

Non-volatile Memory, Engineering, Phase Change Memory +16

N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide

S. Zhu, Kevin J. Chen, M.-F. Li et al. · IEEE Electron Device Letters · 2004 · 204 citations

Schottky Barrier Source/drain, Electrical Engineering, Engineering +10

A TaN–<tex>$hbox HfO_2$</tex>–Ge pMOSFET With Novel<tex>$hbox SiH_4$</tex>Surface Passivation

Nan Wu, Q. Zhang, Chunxiang Zhu et al. · IEEE Electron Device Letters · 2004 · 111 citations

Electrical Engineering, Engineering, Hbox Sih_4 +12

Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

Kah‐Wee Ang, King-Jien Chui, Vladimir Bliznetsov et al. · Applied Physics Letters · 2005 · 111 citations

Engineering, Mechanical Engineering, Silicon–carbon Source∕drain Stressors +18

Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode

Shiyang Zhu, H.Y. Yu, S. J. Whang et al. · IEEE Electron Device Letters · 2004 · 107 citations

Semiconductor Technology, Electrical Engineering, Engineering +10