Phase change random access memory cell with superlattice-like structure

TLDR

The study employs a superlattice‑like structure composed of two phase‑change materials in a PCRAM cell. The SLL design balances phase‑change speed and stability, reduces programming current, achieves a 5 ns write time, and benefits from a thermal conductivity that is less than 30 % of that of a single‑layer material.

Abstract

A superlattice-like structure (SLL) incorporating two nonpromising phase change materials was applied to phase change random access memory (PCRAM) cell. A properly designed SLL structure could balance both the phase change speed and stability of a PCRAM. Moreover, SLL PCRAM cells exhibited lower programming current and fast working time of 5ns. The main reason for the excellent performances is due to the much lower thermal conductivity of the SLL material compared to that of bulk materials. The thermal conductivity of eight SLL layers cycle was found to be smaller than 30% of that of single layer material.