S. J. Whang

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Nan Wu, Qingchun Zhang, Chunxiang Zhu et al. · Applied Physics Letters · 2004 · 143 citations

Engineering, Ge Substrate, Metal-oxide-semiconductor Capacitors +22

Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode

Shiyang Zhu, H.Y. Yu, S. J. Whang et al. · IEEE Electron Device Letters · 2004 · 107 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application

S. J. Whang, Ki-Hong Lee, DaeGyu Shin et al. · 2010 · 83 citations

Non-volatile Memory, Electrical Engineering, Engineering +9

Germanium p- and n-MOSFETs fabricated with novel surface passivation (plasma-PH/sub 3/ and thin AlN) and TaN/HfO/sub 2/ gate stack

S. J. Whang, S.J. Lee, Fei Gao et al. · 2005 · 62 citations

Materials Science, Good Ge, Electrical Engineering +14

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

Shiyang Zhu, H.Y. Yu, J.D. Chen et al. · Solid-State Electronics · 2004 · 34 citations

Schottky Barrier Source/drain, Metal Gate Electrode, Electrical Engineering +8