J.D. Chen

Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications

H.Y. Yu, Jinfeng Kang, Chunyu Ren et al. · IEEE Electron Device Letters · 2004 · 38 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

Shiyang Zhu, H.Y. Yu, J.D. Chen et al. · Solid-State Electronics · 2004 · 34 citations

Schottky Barrier Source/drain, Metal Gate Electrode, Electrical Engineering +8

Thermally robust high quality HfN/HfO/sub 2/ gate stack for advanced CMOS devices

H.Y. Yu, Jinfeng Kang, J.D. Chen et al. · 2004 · 12 citations

Gate Stack, Engineering, Vlsi Design +17

Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

J.D. Chen, H.Y. Yu, M.F. Li et al. · IEEE Electron Device Letters · 2006 · 11 citations

Materials Science, Electrical Engineering, Engineering +9