H. Sunamura

Nanometer-scale switches using copper sulfide

Toshitsugu Sakamoto, H. Sunamura, H. Kawaura et al. · Applied Physics Letters · 2003 · 514 citations

Engineering, Electrical Engineering, Materials Science +17

A nonvolatile programmable solid-electrolyte nanometer switch

Shunichi Kaeriyama, Toshitsugu Sakamoto, H. Sunamura et al. · IEEE Journal of Solid-State Circuits · 2005 · 219 citations

Engineering, Computer Engineering, Electrical Engineering +17

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet et al. · 2010 · 80 citations

Engineering, Electrical Engineering, Microelectronics +10

A 0.063 µm<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

Engineering, Computer Engineering, Electrical Engineering +11

Low-power embedded ReRAM technology for IoT applications

M. Ueki, Kazuhiro Takeuchi, Takashi Yamamoto et al. · 2015 · 57 citations

Engineering, Computer Engineering, Electrical Engineering +12