H. Sunamura

Nanometer-scale switches using copper sulfide

Toshitsugu Sakamoto, H. Sunamura, H. Kawaura et al. · Applied Physics Letters · 2003 · 512 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

A nonvolatile programmable solid-electrolyte nanometer switch

Shunichi Kaeriyama, Toshitsugu Sakamoto, H. Sunamura et al. · IEEE Journal of Solid-State Circuits · 2005 · 219 citations

Materials Science, Non-volatile Memory, Electrical Engineering +14

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet et al. · 2010 · 79 citations

Low-power Electronics, Device Modeling, Electrical Engineering +15

A 0.063 µm<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

Novel Integration Scheme, Engineering, Vlsi Design +21

Low-power embedded ReRAM technology for IoT applications

M. Ueki, Kazuhiro Takeuchi, Takashi Yamamoto et al. · 2015 · 57 citations