H. Sunamura - Concepedia

Concepedia

Author

H. Sunamura

Renesas Electronics (Japan)

Also Known As

H Sunamura, H. Sunamura, Haruka Sunamura

19

Publications

1.1K

Citations

12

H-Index

30

Concepts

All Affiliations

Renesas Electronics (Japan)Renesas Electronics (United States)NEC (Japan)National Institute for Materials Science Toshiba (United States)

HS

About

H. Sunamura is an author at Renesas Electronics (Japan) specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	1K
2	Applied Physics	11	12	1K
3	Biomedical Engineering	1	1	60
4	Chemical Engineering	1	1	25
5	Chemistry	1	1	25

H. Sunamura

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14

Publications

1.1K

Citations

12

H-Index

	Year	Citations
Nanometer-scale switches using copper sulfide Toshitsugu Sakamoto, H. Sunamura, H. Kawaura, Applied Physics Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyOptoelectronic DevicesPhase Change Memory	2003	512
A nonvolatile programmable solid-electrolyte nanometer switch Shunichi Kaeriyama, Toshitsugu Sakamoto, H. Sunamura, IEEE Journal of Solid-State Circuits Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringPiezoelectric Nanogenerators	2005	219
Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond Qijiong Liu, A. Yagishita, N. Loubet, Low-power ElectronicsDevice ModelingElectrical EngineeringUtbb StructureEngineering	2010	79
A 0.063 &#x00B5;m<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch V. Basker, T. Standaert, Hikaru Kawasaki, Novel Integration SchemeEngineeringVlsi DesignMicroscopyPattern Transfer	2010	60
Low-power embedded ReRAM technology for IoT applications M. Ueki, Kazuhiro Takeuchi, Takashi Yamamoto,	2015	57
Highly reliable BEOL-transistor with oxygen-controlled InGaZnO and Gate/Drain offset design for high/low voltage bridging I/O operations K. Kaneko, N. Inoue, S. Saito, Bias InstabilitiesEngineeringIntegrated CircuitsVoltage I/os BridgingInterconnect (Integrated Circuits)	2011	38
Sub-25nm FinFET with advanced fin formation and short channel effect engineering Takashi Yamashita, V. Basker, T. Standaert, Symposium on VLSI Technology Electrical EngineeringAdvanced Fin FormationEngineeringVlsi DesignSelf-heating Correction	2011	34
Low-power embedded ReRAM technology for IoT applications M. Ueki, K. T. Akeuchi, Toru Yamamoto,	2015	31
Material dependence of switching speed of atomic switches made from silver sulfide and from copper sulfide Tomoyuki Tamura, Tsuyoshi Hasegawa, Kazuya Terabe, Journal of Physics Conference Series EngineeringMaterial DependenceChemistryChemical EngineeringNanoelectronics	2007	25
A nonvolatile programmable solid electrolyte nanometer switch Toshitsugu Sakamoto, Shunichi Kaeriyama, H. Sunamura, Materials ScienceNon-volatile MemoryElectrical EngineeringSolid ElectrolyteEngineering	2004	21

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