C. Hu - Concepedia

Author

C. Hu

University of California, Berkeley

Also Known As

C C Hu, C Hu, C. Hu, C.C. Hu, Chaokang Hu, Cheng Hu, Chengyuan Hu, Chenming Hu, Chuahao Hu, Cuiping HU

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

University of California, Berkeley Semiconductor Manufacturing International (Italy)Hodges University Intel (United States)NEC (Japan)

About

C. Hu is an author at University of California, Berkeley specializing in microelectronics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	32	1.8K
2	Applied Physics	15	21	1.3K
3	Computer Engineering	11	12	546
4	Health Sciences	1	1	31
5	Medicine	1	1	31

C. Hu

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
The impact of gate-induced drain leakage current on MOSFET scaling T.Y. Chan, J. Chen, P.K. Ko, Device ModelingElectrical EngineeringEngineeringTechnology ScalingNanoelectronics	1987	344
Future CMOS scaling and reliability C. Hu Proceedings of the IEEE Mosfet Device DimensionsEngineeringComputer ArchitectureIntegrated CircuitsReliability Engineering	1993	207
Substrate hole current and oxide breakdown I. C. Chen, S. Holland, K.K. Young, Applied Physics Letters Hole FluenceElectrical EngineeringHot-hole TunnelingEngineeringPhysics	1986	202
Electron-trap generation by recombination of electrons and holes in SiO2 I. C. Chen, S. Holland, C. Hu Journal of Applied Physics SemiconductorsEngineeringPhysicsCrystalline DefectsNeutral Electron Traps	1987	138
Ultra-thin silicon dioxide leakage current and scaling limit K.F. Schuegraf, C.-C. King, C. Hu SemiconductorsElectrical EngineeringEngineeringPhysicsNanoelectronics	2003	119
Deep-submicrometer MOS device fabrication using a photoresist-ashing technique J.E. Chung, M.-C. Jeng, J.E. Moon, IEEE Electron Device Letters Optical MaterialsEngineeringElectron-beam LithographyOptoelectronic DevicesIntegrated Circuits	1988	93
Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time K. Saino, S. Horiba, Shiro Uchiyama, Hardware SecurityNon-volatile MemoryElectrical EngineeringTail-mode BitsEngineering	2002	71
Performance and reliability design issues for deep-submicrometer MOSFETs J.E. Chung, M.-C. Jeng, J.E. Moon, IEEE Transactions on Electron Devices Low-power ElectronicsElectrical EngineeringEngineeringHardware ReliabilityBias Temperature Instability	1991	65
A model for the electric field in lightly doped drain structures Kartikeya Mayaram, J.C. Lee, C. Hu IEEE Transactions on Electron Devices Device ModelingLdd MosfetElectrical EngineeringSemiconductor DeviceEngineering	1987	58
Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs Azharul Karim, Yogesh Singh Chauhan, Sriramkumar Venugopalan, IEEE Electron Device Letters EngineeringSemiconductor DeviceThermal NetworkElectronic EngineeringThermal Analysis	2012	53

Page 1