Ben Tan

Impact of Termination Region on Switching Loss for SiC MOSFET

Xuan Li, Ben Tan, Alex Q. Huang et al. · IEEE Transactions on Electron Devices · 2019 · 17 citations

Device Modeling, Sic Mosfet, Electrical Engineering +13

5 nm gate length Nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique

Tsung-Yang Liow, Kian-Ming Tan, Rinus T. P. Lee et al. · 2008 · 14 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15

Design and Optimization of Four-Region Multistep Field Limiting Rings for 10kV 4H-SiC IGBTs

Ben Tan, Xiaoli Tian, Lu Jiang et al. · 2018 · 13 citations

Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

Tsung-Yang Liow, Kian-Ming Tan, Rinus T. P. Lee et al. · IEEE Electron Device Letters · 2008 · 11 citations

Semiconductor Technology, Nanowire Field-effect Transistors, Electrical Engineering +14

Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges

Xiaochuan Deng, Shufeng Gao, Ben Tan et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 2019 · 10 citations