Xiaoli Tian

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Yue Sun, Xuanwu Kang, Yingkui Zheng et al. · Electronics · 2019 · 94 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs

Jiang Lu, Jiawei Liu, Xiaoli Tian et al. · IEEE Transactions on Electron Devices · 2020 · 63 citations

Electrical Engineering, Triple Buffers, Engineering +15

A Novel 4H-SiC Trench MOSFET Integrated With Mesa-Sidewall SBD

Zhonglin Han, Yun Bai, Hong Chen et al. · IEEE Transactions on Electron Devices · 2020 · 32 citations

Sic Mosfet, Electrical Engineering, Trench Mosfet +10

Analysis of Mobility for 4H-SiC N/P-Channel MOSFETs Up To 300 °C

Liao Yang, Yun Bai, Chengzhan Li et al. · IEEE Transactions on Electron Devices · 2021 · 28 citations

Semiconductor Technology, Electrical Engineering, Engineering +15

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Leshan Qiu, Yun Bai, Jieqin Ding et al. · IEEE Transactions on Electron Devices · 2024 · 17 citations