Chengzhan Li

Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs

Jiang Lu, Jiawei Liu, Xiaoli Tian et al. · IEEE Transactions on Electron Devices · 2020 · 63 citations

Electrical Engineering, Triple Buffers, Engineering +15

A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window

Xiaochuan Deng, Lijun Li, Jia Wu et al. · IEEE Transactions on Electron Devices · 2017 · 45 citations

Electrical Engineering, Engineering, High Voltage Engineering +12

A Novel 4H-SiC Trench MOSFET Integrated With Mesa-Sidewall SBD

Zhonglin Han, Yun Bai, Hong Chen et al. · IEEE Transactions on Electron Devices · 2020 · 32 citations

Sic Mosfet, Electrical Engineering, Trench Mosfet +10

Analysis of Mobility for 4H-SiC N/P-Channel MOSFETs Up To 300 °C

Liao Yang, Yun Bai, Chengzhan Li et al. · IEEE Transactions on Electron Devices · 2021 · 28 citations

Semiconductor Technology, Electrical Engineering, Engineering +15

Characteristic analysis and energy efficiency of an oil-free dual-piston linear compressor for household refrigeration with various conditions

Chengzhan Li, Jian Sun, Huiming Zou et al. · Energy · 2023 · 23 citations

Household Refrigeration, Engineering, Energy Efficiency +5