H. Shobha

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

J. Zhang, Julien Frougier, Andrew Greene et al. · 2019 · 93 citations

Engineering, Semiconductor Device, Advanced Packaging (Semiconductors) +17

Future on-chip interconnect metallization and electromigration

Chunhua Hu, James J. Kelly, Huai Huang et al. · 2018 · 69 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Experimental study of nanoscale Co damascene BEOL interconnect structures

James J. Kelly, Jinai Chen, Huai Huang et al. · 2016 · 51 citations

Engineering, Nm Node Dimensions, Material Innovation +16

Fifteen Nanometer Resolved Patterns in Selective Area Atomic Layer Deposition—Defectivity Reduction by Monolayer Design

Rudy J. Wojtecki, Magi Mettry, Noah F. Fine Nathel et al. · ACS Applied Materials & Interfaces · 2018 · 47 citations

Materials Science, Engineering, Beam Lithography +13

Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects

A. Simon, T. Bolom, Chunping Niu et al. · 2013 · 40 citations

Engineering, Electrode-electrolyte Interface, Interconnect (Integrated Circuits) +16