C. Wiegand

45nm High-k + metal gate strain-enhanced transistors

C. Auth, A. Cappellani, Jang‐Soo Chun et al. · 2008 · 204 citations

Materials Engineering, Electrical Engineering, Engineering +11

Intrinsic transistor reliability improvements from 22nm tri-gate technology

S. Ramey, A. Ashutosh, C. Auth et al. · 2013 · 166 citations

Reliability, Electrical Engineering, Reliability Engineering +14

MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology

O. Golonzka, Juan G. Alzate, Ümüt Arslan et al. · 2018 · 152 citations

Non-volatile Memory, Electrical Engineering, Key Features +15

13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique

Liqiong Wei, Juan G. Alzate, Ümüt Arslan et al. · 2019 · 132 citations

Offset-cancellation Sensing Technique, Electrical Engineering, Embedded Flash Memory +14

BTI reliability of 45 nm high-K + metal-gate process technology

Sangwoo Pae, M. Agostinelli, M. Brazier et al. · 2008 · 130 citations

Materials Engineering, Nmos Bti, Electrical Engineering +13