E. F. Krimmel - Concepedia

Author

E. F. Krimmel

Goethe University Frankfurt

Also Known As

E. F. Krimmel, E. Krimmel, E.F. Krimmel, EF Krimmel, Krimmel, E. F.

Publications

503

Citations

H-Index

Concepts

All Affiliations

Goethe University Frankfurt Aristotle University of Thessaloniki Siemens (Germany)

About

E. F. Krimmel is an author at Goethe University Frankfurt specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	282
2	Applied Physics	11	12	282
3	Materials Science	10	10	228
4	Materials Engineering	3	3	69
5	Electrical Engineering	2	2	56

E. F. Krimmel

Publications

282

Citations

H-Index

Page 1

	Year	Citations
Implantation profiles modified by sputtering E. F. Krimmel, H.-J. Pfleiderer Radiation Effects Materials ScienceImpurity ProfilesElectrical EngineeringIon ImplantationEngineering	1973	32
Hydrogen profiles of thin PVD silicon nitride films using elastic recoil detection analysis A. Markwitz, Michael Bachmann, H. Baumann, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms EngineeringPhysicsNanoelectronicsApplied PhysicsHydrogen Profiles	1992	30
In situ detection of rearrangement processes during electron beam annealing of ion implanted InP Christian Maurer, R. Kallweit, H. Baumann, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringElectron MicroscopyCrystalline Defects	1993	29
Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA) A. Markwitz, H. Baumann, E. F. Krimmel, Applied Physics A Materials EngineeringMaterials ScienceIon ImplantationEngineeringNanoelectronics	1994	28
Investigations of ultrathin silicon nitride layers produced by low-energy ion implantation and EB-RTA A. Markwitz, H. Baumann, Wolfgang Grill, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringUltrathin SiliconApplied Physics	1994	27
Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing A. Markwitz, H. Baumann, E. F. Krimmel, Applied Physics Letters Materials ScienceSurface CharacterizationIon ImplantationSurface StructureEngineering	1994	25
Kinetics of scanned electron beam annealing of high-energy as ion implanted silicon E. F. Krimmel, H. Oppolzer, Hartmut Runge, physica status solidi (a) Materials ScienceMaterials EngineeringElectrical EngineeringIon ImplantationEngineering	1981	24
MEASUREMENT OF CONTACT POTENTIAL DIFFERENCES BY ELECTRON INTERFEROMETRY E. F. Krimmel, G. Möllenstedt, W. Rothemund Applied Physics Letters EngineeringPhysicsElectron SpectroscopyApplied PhysicsElectron Diffraction	1964	24
Nitrogen profiles of thin sputtered PVD silicon nitride films A. Markwitz, H. Baumann, E. F. Krimmel, Vacuum Materials ScienceEngineeringApplied PhysicsNitrogen ProfilesThin Film Process Technology	1993	23
Low-energy 15N implantation in carbon for the synthesis of carbon nitride layers Frederik Link, H. Baumann, A. Markwitz, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceMaterials EngineeringBoron NitrideEngineeringLow-energy 15N	1996	17

Page 1