Implantation profiles modified by sputtering

E. F. Krimmel, H.-J. Pfleiderer

Radiation Effects · 1973 · 32 citations · 3 references

Concepts

Abstract

Abstract The impurity profiles obtained by ion implantation may be seriously affected by simultaneous sputtering, Saturation conditions are easily achievable in the case of sufficient sputtering yield. A numerical study is made on the basis of a previous model using a simple penetration distribution function. The accordance with experimental results is promising.

References

3