N. G. Kolin - Concepedia

Author

N. G. Kolin

Karpov Institute of Physical Chemistry

Also Known As

N G Kolin, N. G. Kolin, N. KOLIN, N.G Kolin, N.G. Kolin, Nikolai G Kolin

Publications

861

Citations

H-Index

Concepts

All Affiliations

Karpov Institute of Physical Chemistry Ural Institute of Metals University of Florida Jeonbuk National University National Research Tomsk State University

About

N. G. Kolin is an author at Karpov Institute of Physical Chemistry specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	18	20	626
2	Engineering	16	19	587
3	Electrical Engineering	14	15	475
4	Natural Sciences	5	5	132
5	Materials Science	3	3	78

N. G. Kolin

Publications

751

Citations

H-Index

Page 1

	Year	Citations
Fast neutron irradiation effects in n-GaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2007	65
A model for Fermi-level pinning in semiconductors: radiation defects, interface boundaries V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin Physica B Condensed Matter SemiconductorsSemiconductor TechnologyEngineeringPhysicsBias Temperature Instability	2004	52
Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringNeutron Irradiation EffectsSemiconductor DeviceSemiconductors	2005	49
Fermi level pinning in heavily neutron-irradiated GaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringNuclear Physics	2006	41
Alpha particle detection with GaN Schottky diodes A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2009	40
Neutron irradiation effects in p-GaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering	2006	37
Electrical properties and radiation detector performance of free-standing bulk n-GaN In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena SemiconductorsDeep ElectronElectrical EngineeringRadiation Detector PerformanceResidual Donors	2012	37
Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringNeutron DoseEngineering	2012	36
10 MeV electrons irradiation effects in variously doped n-GaN A. Y. Polyakov, In‐Hwan Lee, N. B. Smirnov, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2011	32
Neutron transmutation doping effects in GaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Materials ScienceSemiconductorsWide-bandgap SemiconductorNeutron TransmutationThermal Neutrons	2010	30

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