V. N. Brudnyı̆ - Concepedia

Author

V. N. Brudnyı̆

National Research Tomsk State University ORCID

Also Known As

B. N. Brudnyi, V N Brudnyi, V. BRUDNYI, V. Brudnyi, V. N. Brudnyi, V. N. Brudnyĭ, V. N. Brudnyı̆, V. X. Brudnyi, V.N Brudnyi, V.N. Brudnyi

151

Publications

907

Citations

H-Index

Concepts

All Affiliations

National Research Tomsk State University Karpov Institute of Physical Chemistry Physico-Technical Institute Kemerovo State University Russian Academy of Sciences

About

V. N. Brudnyı̆ is an author at National Research Tomsk State University specializing in applied physics, physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	15	331
2	Applied Physics	11	15	331
3	Electrical Engineering	6	6	121
4	Natural Sciences	2	2	24
5	Chemistry	1	1	11

V. N. Brudnyı̆

Publications

605

Citations

H-Index

Page 1

	Year	Citations
Local neutrality conception: Fermi level pinning in defective semiconductors V. N. Brudnyı̆, S. N. Grinyaev, V. E. Stepanov Physica B Condensed Matter SemiconductorsPhysicsIntrinsic ImpurityLocal Neutrality ConceptionDefect Formation	1995	99
A model for Fermi-level pinning in semiconductors: radiation defects, interface boundaries V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin Physica B Condensed Matter SemiconductorsSemiconductor TechnologyEngineeringPhysicsBias Temperature Instability	2004	52
The electrical and optical properties of 2.0 MeV electron-irradiated ZnGeP2 V. N. Brudnyı̆, D. L. Budnitskii, M. A. Krivov, physica status solidi (a) Optical MaterialsEngineeringSemiconductorsIi-vi SemiconductorElectron Spectroscopy	1978	41
Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights V. N. Brudnyı̆, S. Yu. Sarkisov, А. V. Kosobutsky Semiconductor Science and Technology EngineeringElectronic PropertiesElectronic StructureSemiconductor DeviceSemiconductors	2015	41
Structural, elastic and electronic properties of GaSe under biaxial and uniaxial compressive stress А. V. Kosobutsky, S. Yu. Sarkisov, V. N. Brudnyı̆ Journal of Physics and Chemistry of Solids Materials ScienceEngineeringMaterial PropertyElasticity (Physics)Mechanical Engineering	2013	37
Charge neutrality level and electronic properties of GaSe under pressure V. N. Brudnyı̆, А. V. Kosobutsky, S. Yu. Sarkisov Semiconductors	2010	29
Positron annihilation and Hall effect in electron irradiatedn-InP crystals V. N. Brudnyı̆, S.A. Vorobiev, A. A. Tsoi Applied Physics A EngineeringPhysicsPositron Annihilation SpectroscopyElectron SpectroscopyApplied Physics	1982	23
Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals V. N. Brudnyı̆, S.A. Vorobiev, A. A. Tsoi physica status solidi (a) Positron TrappingElectrical EngineeringPositron AnnihilationEngineeringIon Implantation	1982	21
The level of local charge-neutrality and pinning of the Fermi level in irradiated nitrides wz-III-N (BN, AlN, GaN, InN) V. N. Brudnyı̆, А. V. Kosobutsky, N. G. Kolin Semiconductors	2009	20
The charge neutrality level and the fermi level pinning in A3N (BN, AlN, GaN, InN) nitrides V. N. Brudnyı̆, А. V. Kosobutsky, N. G. Kolin Russian Physics Journal Aluminium NitrideElectrical EngineeringBoron NitrideEngineeringPhysics	2008	20

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