N. S. Tsai - Concepedia

Author

N. S. Tsai

AT&T (United States)

Also Known As

N. S. TSAI, N. S. Tsai, N.-S Tsai, N.-S. Tsai, N.S. Tsai, Nvidia Tsai

Publications

872

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Taiwan Semiconductor Manufacturing Company (Taiwan)Motorola (United States)Massachusetts Institute of Technology

About

N. S. Tsai is an author at AT&T (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	415
2	Applied Physics	6	6	356
3	Electrical Engineering	6	6	155
4	Materials Science	4	4	95
5	Computer Engineering	2	2	37

N. S. Tsai

Publications

817

Citations

H-Index

Page 1

	Year	Citations
Temperature fields produced by traveling distributed heat sources Thomas W. Eagar, N. S. Tsai Welding Journal	1983	402
Distribution of the heat and current fluxes in gas tungsten arcs N. S. Tsai, Thomas W. Eagar Metallurgical Transactions B EngineeringPhysicsApplied PhysicsGas Tungsten ArcsHeat Transfer	1985	188
Process limitation and device design tradeoffs of self-aligned TiSi/sub 2/ junction formation in submicrometer CMOS devices C.-Y. Lu, J.J. Sung, R. Liu, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringVlsi DesignJunction FormationMicrofabrication	1991	63
Characterization of titanium nitride films sputter deposited from a high-purity titanium nitride target T. Brat, N.R. Parikh, N. S. Tsai, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Materials ScienceMagnetic PropertiesEngineeringCrystalline DefectsNanotechnology	1987	50
High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI C.-Y. Lu, J.J. Sung, H.C. Kirsch, IEEE Transactions on Electron Devices Low-power Electronics3.3-V Cmos TechnologyElectrical EngineeringWafer Scale ProcessingEngineering	1989	27
An analog/digital BCDMOS technology with dielectric isolation-devices and processes C.-Y. Lu, N. S. Tsai, Christopher N. Dunn, IEEE Transactions on Electron Devices EngineeringVlsi DesignAnalog DesignIntegrated-circuit TechnologyIntegrated Circuits	1988	22
Study and improvement of anomalous interface states of metal-oxide-semiconductor structures induced by rapid thermal post-oxide annealing J.C. Hsieh, Y.K. Fang, C. W. Chen, Journal of Applied Physics Materials ScienceIi-vi SemiconductorElectrical EngineeringImproved ResultsEngineering	1993	18
A high performance submicron twin tub V technology for custom VLSI applications Chi Wah Leung, M.L. Chen, W.T. Cochran, EngineeringVlsi DesignIntegrated CircuitsElectronic DevicesAdvanced Packaging (Semiconductors)	2003	15
Thermal Oxidation of Undoped LPCVD Polycrystalline‐Silicon Films C.-Y. Lu, N. S. Tsai Journal of The Electrochemical Society Materials ScienceEngineeringThermal OxidationThin FilmsChemical Vapor Deposition	1986	12
The effects of rapid thermal processing on ultra-shallow junctions for deep sub-micron MOSFETs R Liu, C.-Y. Lu, J.J. Sung, Solid-State Electronics Electrical EngineeringSemiconductor DeviceEngineeringPhysicsMicrofabrication	1995	10

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