H. Kotani - Concepedia

Author

H. Kotani

Mitsubishi Electric (Japan)

Also Known As

H. KOTANI, H. Kotani, Hideo KOTANI, Hideo Kotani, Hideo Kotani Hideo Kotani, Kotani, H.

Publications

238

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)The University of Osaka

About

H. Kotani is an author at Mitsubishi Electric (Japan) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	191
2	Applied Physics	9	9	191
3	Chemical Engineering	2	2	58
4	Health Sciences	1	1	19
5	Natural Sciences	1	1	35

H. Kotani

Publications

191

Citations

H-Index

Page 1

	Year	Citations
Film Characteristics of APCVD Oxide Using Organic Silicon and Ozone Masazumi Matsuura, Y. Hayashide, H. Kotani, Japanese Journal of Applied Physics Materials ScienceChemical EngineeringEngineeringFilm CharacteristicsOmcts-o 3	1991	41
Faraday rotation in highly Bi-substituted yttrium iron garnet films prepared by ion beam sputtering Takashi Okuda, N. Koshizuka, Kei Hayashi, IEEE Transactions on Magnetics Rare Earth MineralEngineeringCrystal Growth TechnologyIon Beam SputteringMagnetoresistance	1987	35
Heterostructure CdS1−<i>x</i>Se<i>x</i>−CdS surface lasers for integrated optics Mitsuo Kawabe, H. Kotani, Kohzoh Masuda, Applied Physics Letters Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	1975	25
X-ray lithography by synchrotron radiation of INS–ES Hiroaki Aritome, Takuya Nishimura, H. Kotani, Journal of Vacuum Science and Technology Materials ScienceSynchrotron RadiationX-ray BeamEngineeringPhysics	1978	19
A highly reliable selective CVD-W utilizing SiH4 reduction for VLSI contacts H. Kotani, T. Tsutsumi, J. Komori, Electrical EngineeringWafer Scale ProcessingEngineeringVlsi DesignVlsi Contacts	1987	18
A selective LPCVD tungsten process using silane reduction for VLSI applications T. Tsutsumi, H. Kotani, J. Komori, IEEE Transactions on Electron Devices EngineeringTungsten FilmsTungsten HexafluorideIntegrated CircuitsSemiconductor Device	1990	17
Low-temperature APCVD oxide using TEOS-ozone chemistry for multilevel interconnections H. Kotani, M. Matsuura, Atsushi Fujii, EngineeringLow-temperature ApcvdThin Film Process TechnologyChemical DepositionThin Film Processing	2003	13
Sputter‐Etching Planarization for Multilevel Metallization H. Kotani, H. Yakushiji, Hiroshi Harada, Journal of The Electrochemical Society Materials ScienceComputer SimulationEngineeringBeam LithographyMicrofabrication	1983	12
EPITAXIAL GROWTH OF Bi-SUBSTITUTED YTTRIUM IRON GARNET FILMS BY ION BEAM SPUTTERING Takashi Okuda, N. Koshizuka, Kei Hayashi, Journal of the Magnetics Society of Japan Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringPhysics	1987	11

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