X-ray lithography by synchrotron radiation of INS–ES

Abstract

Synchrotron radiation from the electron-synchrotron INS-ES at the University of Tokyo has been used for x-ray lithography. Several mask patterns, such as the bubble pattern and the holographic grating pattern, are duplicated. Masks used are 0.4 μm-thick gold on 3-μm silicon. At an electron energy of 1.1 GeV the direct-total beam of synchrotron radiation can be used for mask replication. By using the grating-mask pattern with 692-nm period made by the holographic method, the grating pattern with a large height-to-width ratio is obtained. This result clearly demonstrates the high collimation of the x-ray beam from the synchrotron.