Film Characteristics of APCVD Oxide Using Organic Silicon and Ozone

Abstract

Film characteristics of APCVD oxide using octamethylcyclo tetrasiloxane (OMCTS) and O 3 (AP-OMCTS oxide) have been investigated minutely for applications to advanced VLSI devices. Deposition characteristics of AP-OMCTS oxide strongly depend on deposition temperature and high quality films can be formed by increasing the deposition temperature. The step coverage shows a most smooth “flowing profile” around at 425°C. The dependence of the deposition characteristics on O 3 concentration can not be observed in contrast with the deposition characteristics of AP-TEOS oxide which evidently depend on the O 3 concentration. From these results, it is supposed that CVD reactions based on OMCTS-O 3 chemistry consist of the precursor production correspond to CH 3 elimination reaction with O radicals and the subsequent polymerization (dehydration) caused by thermal energy provided from hot substrate.