J. Komori - Concepedia

Author

J. Komori

Mitsubishi Electric (Japan)

Also Known As

J Komori, J. Komori, Junji KOMORI, Junji Komori

Publications

286

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)Mitsubishi Group (Japan)Renesas Electronics (Japan)

About

J. Komori is an author at Mitsubishi Electric (Japan) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	261
2	Applied Physics	8	8	233
3	Medicine	1	1	15
4	Chemical Engineering	1	1	17
5	Computer Engineering	1	1	18

J. Komori

Publications

261

Citations

H-Index

Page 1

	Year	Citations
A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics N. Suzumura, S. Yamamoto, Daisuke Kodama, Electric Field RadiceEngineeringCharge TransportInterconnect (Integrated Circuits)Nanoelectronics	2006	106
Study of oxide breakdown under very low electric field Akinobu Teramoto, Hiroshi Umeda, K. Azamawari, Electrical EngineeringOxide LifetimeEngineeringIntrinsic LifetimePhysics	2003	28
A wafer level monitoring method for plasma-charging damage using antenna PMOSFET test structure Hitoshi Watanabe, J. Komori, K. Higashitani, IEEE Transactions on Semiconductor Manufacturing Electrical EngineeringEngineeringHigh Voltage EngineeringBias Temperature InstabilityStructural Health Monitoring	1997	28
A highly reliable selective CVD-W utilizing SiH4 reduction for VLSI contacts H. Kotani, T. Tsutsumi, J. Komori, Electrical EngineeringWafer Scale ProcessingEngineeringVlsi DesignVlsi Contacts	1987	18
Time-dependent dielectric breakdown of SiO2 films in a wide electric field range Akinobu Teramoto, Hiroshi Umeda, K. Azamawari, Microelectronics Reliability Electrical EngineeringEngineeringOxide ElectronicsApplied PhysicsTime-dependent Dielectric Breakdown	2001	17
A selective LPCVD tungsten process using silane reduction for VLSI applications T. Tsutsumi, H. Kotani, J. Komori, IEEE Transactions on Electron Devices EngineeringTungsten FilmsTungsten HexafluorideIntegrated CircuitsSemiconductor Device	1990	17
Electric-field and temperature dependencies of TDDB degradation in Cu/Low-K damascene structures N. Suzumura, S. Yamamoto, Daisuke Kodama, Cu/low-k Damascene StructuresEngineeringElectric Field DecreasesNanoelectronicsTemperature Dependencies	2008	17
High resolution backside fault isolation technique using directly forming Si substrate into solid immersion lens Tomonori Koyama, Eiji Yoshida, J. Komori, Optical EngineeringSi SubstrateHigh ResolutionEngineeringMicroscopy	2003	15
Effects of N distribution on charge trapping and TDDB characteristics of N/sub 2/O annealed wet oxide M.K. Mazumder, Akinobu Teramoto, J. Komori, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringCharge TrappingEngineeringN Distribution	1999	15

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