D. Hwang

Ultra-thin gate dielectrics: they break down, but do they fail?

B. E. Weir, P. J. Silvėrman, D. Monroe et al. · 2002 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

Gate oxide reliability projection to the sub-2 nm regime

B. E. Weir, Md Ashraful Alam, J. Bude et al. · Semiconductor Science and Technology · 2000 · 80 citations

Engineering, Electrical Engineering, Materials Science +17

An Efficient Approach to Gate Matrix Layout

D. Hwang, W.K. Fuchs, Sung Mo Kang · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1987 · 56 citations

Engineering, Computer Engineering, Computer Science +13

Gate oxides in 50 nm devices: thickness uniformity improves projected reliability

B. E. Weir, P. J. Silvėrman, Muhammad A. Alam et al. · 2003 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Plasma charging damage of ultra-thin gate-oxide-the measurement dilemma

Kin P. Cheung, Philip E. Mason, D. Hwang · 2002 · 16 citations

Engineering, Electrical Engineering, Physics +12