S. M. Alam - Concepedia

Author

S. M. Alam

Everspin Technologies (United States)

Also Known As

J. Janesky, M Sohaib Alam, S. M. Alam, S.M. Alam, Sohaib Alam, Syed Munawar Alam

Publications

656

Citations

H-Index

Concepts

All Affiliations

Everspin Technologies (United States)Massachusetts Institute of Technology Nanyang Technological University GlobalFoundries (Singapore)

About

S. M. Alam is an author at Everspin Technologies (United States) specializing in engineering, microelectronics, and computer engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	513
2	Computer Engineering	11	11	481
3	Electrical Engineering	10	10	292
4	Applied Physics	5	5	317
5	Natural Sciences	3	3	176

S. M. Alam

Publications

536

Citations

H-Index

Page 1

	Year	Citations
A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology Nicholas D. Rizzo, D. Houssameddine, J. Janesky, IEEE Transactions on Magnetics Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureMagnetic Materials	2013	135
Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs) Anna W. Topol, Douglas Charles La Tulipe, L. Shi, EngineeringDevice IntegrationIntegrated CircuitsInterconnect (Integrated Circuits)Physical Design (Electronics)	2006	86
CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications D. Shum, D. Houssameddine, S. T. Woo, Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture	2017	47
Circuit level reliability analysis of Cu interconnects S. M. Alam, Chee Lip Gan, Carl V. Thompson, EngineeringComputer ArchitectureSystem ReliabilityHardware SecurityReliability Engineering	2004	40
Technology for reliable spin-torque MRAM products J. M. Slaughter, K. Nagel, R. Whig, MagnetismSpintronicsElectrical EngineeringEngineeringSpin-orbit Torque	2016	36
High density ST-MRAM technology (Invited) J. M. Slaughter, Nicholas D. Rizzo, J. Janesky, Materials EngineeringNon-volatile MemoryElectrical EngineeringMemory ArchitectureEngineering	2012	35
Circuit-level reliability requirements for Cu metallization S. M. Alam, Chee Lip Gan, Fanrong Wei, IEEE Transactions on Device and Materials Reliability EngineeringEquivalent Circuit-level ReliabilityAdvanced Packaging (Semiconductors)CorrosionElectronic Packaging	2005	32
A comprehensive layout methodology and layout-specific circuit analyses for three-dimensional integrated circuits S. M. Alam, Donald E. Troxel, Carl V. Thompson EngineeringComputer ArchitectureComputer-aided DesignIntegrated CircuitsIntegration Technology	2003	27
Electromigration Reliability Comparison of Cu and Al Interconnects S. M. Alam, Fanrong Wei, Chee Lip Gan, EngineeringInterconnect (Integrated Circuits)Reliability EngineeringAdvanced Packaging (Semiconductors)Nanoelectronics	2005	23
High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications S. Ikegawa, K. Nagel, F. B. Mancoff, 2022 International Electron Devices Meeting (IEDM)	2022	23

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