Young-Hyun Jun

A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 $\times$ 128 I/Os Using TSV Based Stacking

Jung‐Sik Kim, Chi Sung Oh, Hocheol Lee et al. · IEEE Journal of Solid-State Circuits · 2011 · 203 citations

Engineering, Computer Engineering, Electrical Engineering +16

Conditional-capture flip-flop for statistical power reduction

Bai‐Sun Kong, Sam-Soo Kim, Young-Hyun Jun · IEEE Journal of Solid-State Circuits · 2001 · 177 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

Hoeju Chung, Byung‐Hoon Jeong, Byung-Jun Min et al. · 2011 · 83 citations

Engineering, Computer Engineering, Electrical Engineering +14

An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion

Seung-Jun Bae, Kwang‐Il Park, Jeong-Don Ihm et al. · IEEE Journal of Solid-State Circuits · 2008 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +17

CMOS temperature sensor with ring oscillator for mobile DRAM self-refresh control

Chan-Kyung Kim, Jae-Goo Lee, Young-Hyun Jun et al. · Microelectronics Journal · 2007 · 51 citations

Engineering, Computer Engineering, Electrical Engineering +17