Y. Nakabayashi

Short-Channel Performance Improvement by Raised Source/Drain Extensions With Thin Spacers in Trigate Silicon Nanowire MOSFETs

Y. Nakabayashi, Ken Uchida · IEEE Electron Device Letters · 2011 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Short-channel performance and mobility analysis of <110>- and <100>-oriented tri-gate nanowire MOSFETs with raised source/drain extensions

M. Saitoh, Y. Nakabayashi, Hiroshi Itokawa et al. · 2010 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of the Universal Mobility of SiC MOSFETs Using Wet Oxide Insulators on Carbon Face With Low Interface State Density

T. Ohashi, Y. Nakabayashi, Ryosuke Iijima · IEEE Transactions on Electron Devices · 2018 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Si self-diffusivity using isotopically pure 30Si epitaxial layers

Siti Rahmah Aid, T. Sakaguchi, K. Toyonaga et al. · Materials Science and Engineering B · 2004 · 15 citations

Engineering, Materials Engineering, Materials Science +15

Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO<sub>2</sub>/SiC Interfaces on C-Face 4H-SiC

Tetsuo Hatakeyama, Tatsuo Shimizu, Takaya Suzuki et al. · Materials science forum · 2013 · 10 citations · Full text

Engineering, Electrical Engineering, Materials Science +17