T. Ohashi

High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures

Masashi Bando, T. Ohashi, Münir Dede et al. · Journal of Applied Physics · 2009 · 50 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Investigation of the Universal Mobility of SiC MOSFETs Using Wet Oxide Insulators on Carbon Face With Low Interface State Density

T. Ohashi, Y. Nakabayashi, Ryosuke Iijima · IEEE Transactions on Electron Devices · 2018 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Improving the specific on-resistance and short-circuit ruggedness tradeoff of 1.2-kV-class SBD-embedded SiC MOSFETs through cell pitch reduction and internal resistance optimization

Hiroshi Kono, Shunsuke Asaba, T. Ohashi et al. · 2021 · 16 citations

Engineering, Electrical Engineering, Materials Science +16

Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Naotoshi Kadotani, T. Ohashi, Tsunaki Takahashi et al. · Japanese Journal of Applied Physics · 2011 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

CMOS device optimization for system-on-a-chip applications

Kazuo Imai, Koji Yamaguchi, Tomoaki Kudo et al. · 2002 · 15 citations

Engineering, Computer Engineering, Electrical Engineering +17