Shunsuke Asaba

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode

Akihiro Suzuki, Shunsuke Asaba, Kimihiko Kato et al. · Japanese Journal of Applied Physics · 2014 · 21 citations

Engineering, Materials Engineering, Materials Science +17

Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability

Shunsuke Asaba, Tatsuo Schimizu, Yukio Nakabayashi et al. · Materials science forum · 2018 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Improving the specific on-resistance and short-circuit ruggedness tradeoff of 1.2-kV-class SBD-embedded SiC MOSFETs through cell pitch reduction and internal resistance optimization

Hiroshi Kono, Shunsuke Asaba, T. Ohashi et al. · 2021 · 16 citations

Engineering, Electrical Engineering, Materials Science +16

Clamping Capability of Parasitic p-n Diode in SBD-Embedded SiC MOSFETs

T. Ohashi, Hiroshi Kono, Souzou Kanie et al. · IEEE Transactions on Electron Devices · 2022 · 11 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Clamping Capability of Parasitic Body Diode Utilizing New Equivalent Circuit Model of SBD-embedded SiC MOSFET

T. Ohashi, Hiroshi Kono, Souzou Kanie et al. · 2021 · 10 citations

Engineering, Electrical Engineering, Circuit Theory +14