Robin Roelofs

Statistics

Publications

Citations

330

H-Index

Active since

2013

Affiliations

ASM International (Belgium)(Current)

IMEC

KU Leuven

Ghent University

Leibniz Institute for High Performance Microelectronics

Robin Roelofs is an author at ASM International (Belgium) specializing in materials science, semiconductor device materials, and semiconductor devices.

Publications per year

2013–2018

Publications

Room‐Temperature ALD of Metal Oxide Thin Films by Energy‐Enhanced ALD

Stephen E. Potts, Harald B. Profijt, Robin Roelofs et al. · Chemical Vapor Deposition · 2013 · 71 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Tian‐Li Wu, Denis Marcon, Benoit Bakeroot et al. · Applied Physics Letters · 2015 · 66 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Tian‐Li Wu, Denis Marcon, Brice De Jaeger et al. · 2015 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

Gang Niu, Hee‐Dong Kim, Robin Roelofs et al. · Scientific Reports · 2016 · 51 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices

Alessandro Grossi, Eduardo Pérez, Cristian Zambelli et al. · Scientific Reports · 2018 · 43 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

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