A.Y. Kang

Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

A.Y. Kang, Patrick M. Lenahan, John F. Conley · Applied Physics Letters · 2003 · 118 citations

Materials Science, Spintronics, Engineering +14

The radiation response of the high dielectric-constant hafnium oxide/silicon system

A.Y. Kang, Patrick M. Lenahan, John F. Conley · IEEE Transactions on Nuclear Science · 2002 · 81 citations

Electrical Engineering, Engineering, Bare Oxide Structures +12

Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

A.Y. Kang, P. M. Lenahan, John F. Conley et al. · Applied Physics Letters · 2002 · 54 citations · Full text

Engineering, Silicon On Insulator, Defect Tolerance +17

Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices

Jason T. Ryan, Patrick M. Lenahan, A.Y. Kang et al. · IEEE Transactions on Nuclear Science · 2005 · 41 citations

Engineering, Oxygen Vacancy Center, Atomic Scale Defects +16

Radiation-induced leakage currents: atomic scale mechanisms

R.M. Lenahan, J. P. Campbell, A.Y. Kang et al. · IEEE Transactions on Nuclear Science · 2001 · 21 citations

Electrical Engineering, Engineering, Physics +14