K. Asai - Concepedia

Author

K. Asai

NTT (Japan)

Also Known As

K. Asai, K. W. Asai, K.W. Asai, Kazuyoshi Asai, Kentaro Asai

Publications

708

Citations

H-Index

Concepts

All Affiliations

NTT (Japan)NTT Basic Research Laboratories IBM Research - Thomas J. Watson Research Center

About

K. Asai is an author at NTT (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	495
2	Applied Physics	13	15	473
3	Electrical Engineering	10	11	266
4	Computer Engineering	1	1	33
5	Materials Engineering	1	1	99

K. Asai

Publications

567

Citations

H-Index

Page 1

	Year	Citations
Diffusion in the Amorphous Phase of Pd-19-at.%-Si Metallic Alloy D. K. Gupta, K. N. Tu, K. Asai Physical Review Letters Materials ScienceMaterials EngineeringEngineeringAmorphous PhasePhysics	1975	99
Self-align implantation for <i>n</i> <sup>+</sup> -layer technology (SAINT) for high-speed GaAs ICs K. Yamasaki, K. Asai, T. Mizutani, Electronics Letters	1982	72
Reactively sputtered WSiN film suppresses As and Ga outdiffusion K. Asai, Hirohiko Sugahara, Yutaka Matsuoka, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Materials ScienceSemiconductorsEngineeringPhysicsOptical Properties	1988	52
Grain boundary self-diffusion in evaporated Au films at low temperatures D. Gupta, K. Asai Thin Solid Films Materials ScienceMaterial AnalysisEngineeringDiffusion ResistanceSurface Science	1974	51
GaAs LSI-directed MESFET's with self-aligned implantation for n<sup>+</sup>-layer technology (SAINT) K. Yamasaki, K. Asai, K. Kurumada IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	1982	50
A 0.2 mu m GaAs MESFET technology for 10 Gb/s digital and analog ICs Y. Yamane, M. Ohhata, Hiroyuki Kikuchi, Electrical EngineeringDb GainEngineeringRf SemiconductorNanoelectronics	2002	33
Sputter Etching Effects on GaAs Schottky Junctions K. Yamasaki, K. Asai, K. Shimada, Journal of The Electrochemical Society Thermal Recovery CharacteristicsEngineeringThin Film Process TechnologySemiconductor DeviceElectronic Devices	1982	30
Effects of neutral buried p-layer on high-frequency performance of GaAs MESFETs K. Onodera, M. Tokumitsu, M. Tomizawa, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringEngineeringHigh-frequency DeviceElectronic Engineering	1991	24
High microwave and ultra-low noise performance of fully ion-implanted GaAs MESFETs with Au/WSiN T-shaped gate K. Onodera, K. Nishimura, K. Asai, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringGate ResistanceRf SemiconductorUltra-low Noise Performance	1993	24
Design and performance of wideband GaAs MMIC's for high-speed optical communication systems Yasuhiko Imai, Eiichi Sano, K. Asai IEEE Transactions on Microwave Theory and Techniques Free-space Optical NetworkPhotonicsElectrical EngineeringMicrowave CircuitsWideband Gaas Mmic	1992	22

Page 1