N. Khalil - Concepedia

Author

N. Khalil

Digital Wave (United States)

Also Known As

N Khalil, N. Khalil, N.A. Khalil, Nadim A. Khalil, Nadim Khalil

Publications

185

Citations

H-Index

Concepts

All Affiliations

Digital Wave (United States)

About

N. Khalil is an author at Digital Wave (United States) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	155
2	Electrical Engineering	7	7	155
3	Applied Physics	5	5	117
4	Natural Sciences	1	1	44
5	Computer Engineering	1	1	44

N. Khalil

Publications

165

Citations

H-Index

Page 1

	Year	Citations
A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications R. Rios, N.D. Arora, Cheng‐Liang Huang, EngineeringPhysical Long-channel ModelSemiconductor DeviceCircuit SystemQuantum Computing	2002	44
The extraction of two-dimensional MOS transistor doping via inverse modeling N. Khalil, J. Faricelli, David A. Bell, IEEE Electron Device Letters Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1995	29
Comparison of two-dimensional carrier profiles in metal–oxide– semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling Peter Wolf, Wilfried Vandervorst, H. E. SMITH, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Device ModelingDepth PrecisionElectrical EngineeringElectronic DevicesTwo-dimensional Carrier Profiles	2000	22
Reduced Order Models for Double-Cage Induction Motors N. Khalil, O.T. Tan, Iris U. Baran IEEE Transactions on Power Apparatus and Systems Numerical AnalysisElectrical EngineeringReduced Order ModelingEngineeringElectric Machine	1982	19
Energy extraction from RF/ Microwave signal Uzma Batool, Abdul Rehman, N. Khalil, Electrical EngineeringEnergy HarvestingEngineeringRadio FrequencyEnergy Efficiency	2012	19
An accurate gate length extraction method for sub-quarter micron MOSFET's Cheng‐Liang Huang, J. Faricelli, D.A. Antoniadis, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringNanoelectronicsPolysilicon Gate Length	1996	12
A novel method for extracting the two-dimensional doping profile of a sub-half micron MOSFET N. Khalil, J. Faricelli, David A. Bell,	2002	10
Two-dimensional dopant profiling of submicron metal–oxide–semiconductor field-effect transistor using nonlinear least squares inverse modeling N. Khalil, J. Faricelli, C.-L. Huang, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Device ModelingSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1996	10

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