A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications

Abstract

We present a physical and continuous compact MOSFET model applicable to deep sub-micron devices with very thin gate oxide thicknesses. We focus on the premise that a good compact model should be based on a physical long-channel model that accurately fits both I-V and C-V data. To meet this requirement, we found that the model must account for the correct bias dependency of the surface potential, and include polysilicon depletion and quantum mechanical effects. The resulting model is predictive within a range of the fundamental process parameters, and is thus suitable for statistical circuit simulations.