Characteristics of impact-ionization current in the advanced self-aligned polysilicon-emitter bipolar transistor

T.M. Liu, T.-Y. Chiu, V.D. Archer, +1

IEEE Transactions on Electron Devices

Device ModelingElectrical EngineeringIon ImplantationEngineeringPhysics +12

Selective oxidation technologies for high density MOS

J. Hui, T.-Y. Chiu, S.S. Wong, +1

IEEE Electron Device Letters

Materials ScienceOxygen Reduction ReactionChemical EngineeringIon ImplantationEngineering +11

A Half-micron Super Self-aligned BiCMOS Technology for High Speed Applications

T. M. Liu, G.M. Chin, Dae‐Young Jeon, +10

Low-power ElectronicsHigh Speed ApplicationsElectrical EngineeringHigh DensityEngineering +13

Non-overlapping super self-aligned BiCMOS with 87 ps low power ECL

T.-Y. Chiu, G.M. Chin, M.Y. Lau, +9

Electrical EngineeringEngineeringVlsi DesignPhysicsHigh-speed Electronics +11

A high speed super self-aligned bipolar-CMOS technology

T.-Y. Chiu, G.M. Chin, M.Y. Lau, +7

Electrical EngineeringEngineeringVlsi DesignNanoelectronicsMixed-signal Integrated Circuit +9

Direct measurement of base drift field in bipolar transistors

Ran Yan, T.M. Liu, T.-Y. Chiu, +1

IEEE Electron Device Letters

Device ModelingElectrical EngineeringEngineeringMeasurementElectronic Engineering +9

A high performance super self-aligned 3 V/5 V BiCMOS technology with extremely low parasitics for low-power mixed-signal applications

J.M. Sung, T.-Y. Chiu, Kieran Lau, +14

IEEE Transactions on Electron Devices

Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignDeveloped Bicmos Process +11

The design and characterization of nonoverlapping super self-aligned BiCMOS technology

T.-Y. Chiu, G.M. Chin, M.Y. Lau, +9

IEEE Transactions on Electron Devices

SpintronicsElectrical EngineeringPolysilicon ElectrodesEngineeringPhysics +11

BEST: a BiCMOS-compatible super-self aligned ECL technology

K.G. Moerschel, T.-Y. Chiu, W.A. Possanza, +17

EngineeringVlsi DesignElectronic DesignComputer ArchitectureIntegrated Circuits +18

The Material Properties of Silicon Nitride Formed by Low Energy Ion Implantation

T.-Y. Chiu, W.G. Oldham, C. T. Hovland

Journal of The Electrochemical Society

Materials ScienceIon ImplantationMaterial PropertiesEngineeringCrystalline Defects +13