Sansaptak Dasgupta

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

Sansaptak Dasgupta, Nidhi Nidhi, David F. Brown et al. · Applied Physics Letters · 2010 · 141 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

A. Raman, Sansaptak Dasgupta, Siddharth Rajan et al. · Japanese Journal of Applied Physics · 2008 · 80 citations

Power-switching Figure, Engineering, Power Electronics +16

Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

Stephen W. Kaun, Man Hoi Wong, Sansaptak Dasgupta et al. · Applied Physics Express · 2011 · 74 citations

Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy

Sansaptak Dasgupta, Feng Wu, James S. Speck et al. · Applied Physics Letters · 2009 · 72 citations

Materials Engineering, Materials Science, Aluminium Nitride +11

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

Uttam Singisetti, Man Hoi Wong, Sansaptak Dasgupta et al. · IEEE Electron Device Letters · 2010 · 64 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11