Sansaptak Dasgupta - Concepedia

Author

Sansaptak Dasgupta

University of California, Santa Barbara

Also Known As

Sansaptak Dasgupta

Publications

751

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara

About

Sansaptak Dasgupta is an author at University of California, Santa Barbara specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	620
2	Applied Physics	13	13	620
3	Electrical Engineering	12	12	548
4	Materials Science	2	2	101
5	Materials Engineering	1	1	72

Sansaptak Dasgupta

Publications

726

Citations

H-Index

Page 1

	Year	Citations
Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth Sansaptak Dasgupta, Nidhi Nidhi, David F. Brown, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesGan Hemts	2010	141
AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit A. Raman, Sansaptak Dasgupta, Siddharth Rajan, Japanese Journal of Applied Physics Power-switching FigureEngineeringPower ElectronicsAlgan Channel HemtsElectronic Devices	2008	80
Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors Stephen W. Kaun, Man Hoi Wong, Sansaptak Dasgupta, Applied Physics Express	2011	74
Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy Sansaptak Dasgupta, Feng Wu, James S. Speck, Applied Physics Letters Materials EngineeringMaterials ScienceAluminium NitrideSurface CharacterizationEngineering	2009	72
Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth Uttam Singisetti, Man Hoi Wong, Sansaptak Dasgupta, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSelf-aligned Source/drain RegrowthE-mode Operation	2010	64
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$ Daniel J. Denninghoff, Sansaptak Dasgupta, Jing Lu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringN-polar Gan/algan Mis-hemtsN-polar Gan Hemt	2012	63
Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm Nidhi Nidhi, Sansaptak Dasgupta, Jing Lu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2012	32
Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy Sansaptak Dasgupta, Soojeong Choi, Feng Wu, Applied Physics Express Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesGrowth Temperature	2011	29
Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz Nidhi Nidhi, Sansaptak Dasgupta, Jing Lu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2012	29
N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications Nidhi Nidhi, Sansaptak Dasgupta, S. Keller, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringAin/gan SuperlatticeKa-band Applications	2011	29

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