A. Raman - Concepedia

Author

A. Raman

University of California, Santa Barbara

Also Known As

A Raman, A. Raman, Ajay Raman, Christophe Hurni

Publications

394

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara National University of Singapore

About

A. Raman is an author at University of California, Santa Barbara specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	344
2	Applied Physics	7	7	344
3	Electrical Engineering	5	5	301
4	Chemical Engineering	1	1	90
5	Materials Engineering	1	1	25

A. Raman

Publications

344

Citations

H-Index

Page 1

	Year	Citations
Plasma-induced damage to <i>n</i>-type GaN H. W. Choi, S. J. Chua, A. Raman, Applied Physics Letters Wide-bandgap SemiconductorEngineeringPlasma PhysicsChemical EngineeringNanoelectronics	2000	90
AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit A. Raman, Sansaptak Dasgupta, Siddharth Rajan, Japanese Journal of Applied Physics Power-switching FigureEngineeringPower ElectronicsAlgan Channel HemtsElectronic Devices	2008	80
High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels Gregor Koblmüller, Rongming Chu, A. Raman, Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2010	79
<i>In-situ</i> metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors X. Liu, Ramya Yeluri, J. Kim, Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringIn-situ MoscapsAl2o3 Grown	2013	29
Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production Wei Shi, D.H Zhang, Haitao Zheng, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal Growth TechnologyApplied Physics	1999	25
Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base Sansaptak Dasgupta, Nidhi Nidhi, A. Raman, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2011	23
Evaluation of III–V multilayer transport parameters using quantitative mobility spectrum analysis J. Antoszewski, J.M. Dell, L. Faraone, Materials Science and Engineering B EngineeringApplied PhysicsTransport PhenomenaScalar TransportTransportation Engineering	1997	18

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