A. Raman

Plasma-induced damage to <i>n</i>-type GaN

H. W. Choi, S. J. Chua, A. Raman et al. · Applied Physics Letters · 2000 · 90 citations

Wide-bandgap Semiconductor, Engineering, Plasma Physics +16

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

A. Raman, Sansaptak Dasgupta, Siddharth Rajan et al. · Japanese Journal of Applied Physics · 2008 · 80 citations

Power-switching Figure, Engineering, Power Electronics +16

High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

Gregor Koblmüller, Rongming Chu, A. Raman et al. · Journal of Applied Physics · 2010 · 79 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +10

<i>In-situ</i> metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

X. Liu, Ramya Yeluri, J. Kim et al. · Applied Physics Letters · 2013 · 29 citations

Materials Science, Electrical Engineering, Engineering +10

Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production

Wei Shi, D.H Zhang, Haitao Zheng et al. · Journal of Crystal Growth · 1999 · 25 citations

Materials Science, Materials Engineering, Engineering +6