Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production - Concepedia

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Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production

25

Citations

7

References

1999

Year

Wei Shi, D.H Zhang, Haitao Zheng, Soon Fatt Yoon, C. H. Kam, A. Raman

Journal of Crystal Growth

Materials ScienceMaterials EngineeringEngineeringCrystal Growth TechnologyApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsCompound Semiconductor

References

	Year	Citations

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