T. Tanigawa

A 30-ns 64-Mb DRAM with built-in self-test and self-repair function

A. Tanabe, T. Takeshima, Hiroki Koike et al. · IEEE Journal of Solid-State Circuits · 1992 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +17

First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

H. Honjo, T. V. A. Nguyen, T. Watanabe et al. · 2019 · 79 citations

Natural Sciences, Electrical Engineering, Materials Science +15

14ns write speed 128Mb density Embedded STT-MRAM with endurance>10¹⁰ and 10yrs retention@85°C using novel low damage MTJ integration process

H. Sato, H. Honjo, Takaya Watanabe et al. · 2018 · 54 citations

Engineering, Materials Engineering, Materials Science +10

Efficient generation of near-i.r. stimulated light scattering in optical fibres pumped in low-dispersion region at 1.3 μm

Kunihiko Washio, Ken Inoue, T. Tanigawa · Electronics Letters · 1980 · 42 citations

Natural Sciences, Electrical Engineering, Optics +14

A 30-ns 256-Mb DRAM with a multidivided array structure

Tadahiko Sugibayashi, T. Takeshima, I. Naritake et al. · IEEE Journal of Solid-State Circuits · 1993 · 39 citations

Engineering, Computer Engineering, Electrical Engineering +17