Y. D. Wu

Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics

T.D. Lin, H. C. Chiu, Pei-Ching Chang et al. · Solid-State Electronics · 2010 · 35 citations

Engineering, Materials Engineering, Materials Science +13

MBE-grown high gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics

Wen‐Chung Lee, Y. J. Lee, Y. D. Wu et al. · Journal of Crystal Growth · 2005 · 28 citations

Engineering, Materials Engineering, Materials Science +16

Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3∕Ga2O3(Gd2O3)∕In0.2Ga0.8As

Y. D. Wu, T. D. Lin, T. H. Chiang et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 12 citations

Engineering, Materials Engineering, Materials Science +17

High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation

T.-W. Pi, Mao Lin Huang, Wen‐Chung Lee et al. · Applied Physics Letters · 2011 · 10 citations

Natural Sciences, Materials Engineering, Materials Science +17

Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-κ gate dielectrics

S. L. You, C. C. Huang, C. J. Wang et al. · Applied Physics Letters · 2008 · 10 citations

Engineering, Electrical Engineering, Materials Science +17