K.-K. Lew - Concepedia

Author

K.-K. Lew

United States Naval Research Laboratory

Also Known As

K-K. Lew, K. K. Lew, K.-K. Lew, K.K. Lew

Publications

621

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory Pennsylvania State University University of Maryland, College Park University of South Carolina Science Applications International Corporation (United States)

About

K.-K. Lew is an author at United States Naval Research Laboratory specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	613
2	Applied Physics	11	11	613
3	Electrical Engineering	3	3	171
4	Chemical Engineering	1	1	70
5	Chemistry	1	1	25

K.-K. Lew

Publications

613

Citations

H-Index

Page 1

	Year	Citations
Measuring the specific contact resistance of contacts to semiconductor nanowires Suzanne E. Mohney, Y. Wang, Marco A. Cabassi, Solid-State Electronics Electrical EngineeringEngineeringSpecific ResistancePhysicsNanotechnology	2004	136
Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions Robert E. Stahlbush, Brenda L. VanMil, R.L. Myers-Ward, Applied Physics Letters Materials EngineeringSemiconductorsMaterials ScienceSemiconductor TechnologyEdge Dislocations	2009	103
Bicrystalline Silicon Nanowires A. H. Carim, K.-K. Lew, Joan M. Redwing Advanced Materials Materials ScienceOne-dimensional MaterialNanoscale SystemEngineeringPhysics	2001	79
Oxidation of silicon nanowires Daniel Shir, B. Z. Liu, Ahmad M. Mohammad, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Silicon NanowiresEngineeringIntegrated CircuitsNanocomputingSilicon On Insulator	2006	70
Recombination processes controlling the carrier lifetime in n−4H–SiC epilayers with low Z1/2 concentrations P. B. Klein, Rachael L. Myers‐Ward, K.-K. Lew, Journal of Applied Physics Materials ScienceSemiconductor TechnologyEpitaxial GrowthDominant RecombinationEngineering	2010	60
Basal plane dislocation reduction for 8° off-cut, 4H-SiC using <i>in situ</i> variable temperature growth interruptions Brenda L. VanMil, Robert E. Stahlbush, R.L. Myers-Ward, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringMechanical EngineeringIntegrated CircuitsBasal Plane DislocationsEdge Dislocations	2008	38
Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers Sergey I. Maximenko, Jaime A. Freitas, Rachael L. Myers‐Ward, Journal of Applied Physics Materials ScienceMaterials EngineeringSemiconductor TechnologyEdge DislocationsDiffusion Length	2010	37
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8 Brenda L. VanMil, K.-K. Lew, Rachael L. Myers‐Ward, Journal of Crystal Growth Materials EngineeringEngineeringApplied PhysicsSemiconductor Device FabricationSilicon On Insulator	2008	30
Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires Ahmad M. Mohammad, Soham Dey, K.-K. Lew, Journal of The Electrochemical Society Materials ScienceSilicon NanowiresEngineeringNanoporous MaterialNanomaterials	2003	25
Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC Marko J. Tadjer, Karl D. Hobart, Joshua D. Caldwell, Applied Physics Letters EngineeringSemiconductor NanostructuresSemiconductorsElectronic DevicesNanoelectronics	2007	23

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