J. Delmotte

GeSn channel nMOSFETs: Material potential and technological outlook

Shubhanshu Gupta, Benjamin Vincent, Dennis Lin et al. · 2012 · 31 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions

Benjamin Vincent, Roger Loo, W. Vandervorst et al. · Solid-State Electronics · 2011 · 29 citations

Electrical Engineering, Engineering, Nanoelectronics +8

Record low contact resistivity to n-type Ge for CMOS and memory applications

Koen Martens, Andrea Firrincieli, R. Rooyackers et al. · 2010 · 24 citations

Low-power Electronics, N-ge Contacts, Electrical Engineering +14

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Kuo-Hsing Kao, Anne S. Verhulst, R. Rooyackers et al. · Journal of Applied Physics · 2014 · 23 citations · Full text

Device Modeling, Semiconductors, Electrical Engineering +14

Simulation of the Phosphorus Profiles in a c-Si Solar Cell Fabricated Using POCl3 Diffusion or Ion Implantation and Annealing

A. Florakis, Tom Janssens, Niels Posthuma et al. · Energy Procedia · 2013 · 17 citations · Full text

Materials Science, Electrical Engineering, Phosphorus Profiles +13