J. Foucher - Concepedia

Author

J. Foucher

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Also Known As

Bringoltz, Foucher, J., Foucher, Johann, Foucher, Julien, J Foucher, J. Foucher, J.L. Foucher, Johann Foucher

112

Publications

889

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives Laboratoire d'Électronique des Technologies de l'Information CEA Grenoble Centre National de la Recherche Scientifique Laboratoire des Technologies de la Microélectronique

About

J. Foucher is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	691
2	Applied Physics	14	16	590
3	Natural Sciences	5	5	102
4	Education	4	4	94
5	Health Sciences	1	1	71

J. Foucher

Publications

749

Citations

H-Index

Page 1

	Year	Citations
High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding O. Weber, O. Faynot, F. Andrieu, Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2008	159
Tip characterization and surface reconstruction of complex structures with critical dimension atomic force microscopy Gregory A. Dahlen, Marc Osborn, Nihat Okulan, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Image ReconstructionEngineeringComplex StructuresMicroscopy3D Body Scanning	2005	71
Hydrogen annealing of arrays of planar and vertically stacked Si nanowires E. Dornel, T. Ernst, J.-Ch. Barbé, Applied Physics Letters EngineeringNanodevicesSi NanowiresSilicon On InsulatorSuspended Nanowires	2007	50
Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors E. Pargon, M. Martin, J. Thiault, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringMicroscopyLinewidth Roughness TransferPolysilicon Transistor GatesIntegrated Circuits	2008	42
Hyperbranched Polymers for Photolithographic Applications – Towards Understanding the Relationship between Chemical Structure of Polymer Resin and Lithographic Performances Christos L. Chochos, Esma Ismailova, Cyril Brochon, Advanced Materials EngineeringChemistryMolecular PolymerPolymersChemical Engineering	2008	42
Plasma impact on 193 nm photoresist linewidth roughness: Role of plasma vacuum ultraviolet light E. Pargon, M. Martin, K. Menguelti, Applied Physics Letters Optical MaterialsEngineeringElectron-beam LithographySignificant Linewidth RoughnessNm Photoresist Patterns	2009	42
Optical Fourier transform scatterometry for LER and LWR metrology Pierre Boher, Jerome Petit, Thierry Leroux, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE EngineeringMeasurementMicroscopyOptical TestingLwr Metrology	2005	41
Line edge roughness characterization with a three-dimensional atomic force microscope: Transfer during gate patterning processes J. Thiault, J. Foucher, J.H. Tortai, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringElectron-beam LithographyMicroscopySilicon On InsulatorNanotribology	2005	31
Chemical topography analyses of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas L. Vallier, J. Foucher, X. Detter, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceElectrical EngineeringEngineeringPhysicsMicrofabrication	2003	26
3D-AFM enhancement for CD metrology dedicated to lithography sub-28-nm node requirements J. Foucher, Narender Rana, C. Dézauzier Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE EngineeringElectron-beam LithographyMicroscopyMeasurementEducation	2010	24

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