D. T. McInturff - Concepedia

Author

D. T. McInturff

Purdue University West Lafayette

Also Known As

D. McInturff, D. T. McInturff, D.T. McInturff, David T. McInturff, M. R. Melloch

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Purdue University West Lafayette IBM Research - Thomas J. Watson Research Center IBM (United States)Interface (United States)Brooklyn College

About

D. T. McInturff is an author at Purdue University West Lafayette specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	23	1.2K
2	Applied Physics	16	23	1.2K
3	Natural Sciences	3	3	97
4	Chemical Engineering	1	1	50
5	Chemistry	1	1	32

D. T. McInturff

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy A.C. Warren, J. M. Woodall, J. L. Freeouf, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringGaas Buffer LayersEngineering	1990	434
1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As) A.C. Warren, J. H. Burroughes, J. M. Woodall, IEEE Electron Device Letters SemiconductorsPhotonicsElectrical EngineeringOptical MaterialsGaas Detector	1991	74
Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs B. Grandidier, Huajie Chen, R. M. Feenstra, Applied Physics Letters Compensation EffectEngineeringUndoped MaterialLow TemperatureSemiconductors	1999	68
Superconducting InGaAs junction field-effect transistors with Nb electrodes A. W. Kleinsasser, Thomas N. Jackson, D. T. McInturff, Applied Physics Letters Normal FetsElectrical EngineeringJosephson JunctionsEngineeringSuperconducting Material	1989	67
Crossover from tunneling to metallic behavior in superconductor-semiconductor contacts A. W. Kleinsasser, Thomas N. Jackson, D. T. McInturff, Applied Physics Letters Superconducting MaterialElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1990	65
Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown InGaAs/InAlAs multiple quantum wells P Juodawlkis, D. T. McInturff, Stephen E. Ralph Applied Physics Letters Optical NonlinearitiesEngineeringHigh Resistivity MaterialOptoelectronic DevicesSemiconductor Nanostructures	1996	57
High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates D.L. Rogers, J. M. Woodall, G. D. Pettit, IEEE Electron Device Letters EngineeringOptoelectronic DevicesIntegrated CircuitsIndium ConcentrationsSemiconductors	1988	50
Characterization of photochemically unpinned GaAs C. W. Wilmsen, P. D. Kirchner, John M. Baker, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena SemiconductorsIi-vi SemiconductorChemical EngineeringOptical MaterialsEngineering	1988	50
Use of nonstoichiometry to form GaAs tunnel junctions Shaikh Ahmed, M. R. Melloch, E. S. Harmon, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1997	40
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP T. J. de Lyon, N.I. Buchan, P. D. Kirchner, Journal of Crystal Growth Materials ScienceEngineeringCarbon DopingApplied PhysicsMolecular Beam Epitaxy	1991	38

Page 1