D. T. McInturff

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

A.C. Warren, J. M. Woodall, J. L. Freeouf et al. · Applied Physics Letters · 1990 · 434 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +15

1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)

A.C. Warren, J. H. Burroughes, J. M. Woodall et al. · IEEE Electron Device Letters · 1991 · 74 citations

Semiconductors, Photonics, Electrical Engineering +13

Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs

B. Grandidier, Huajie Chen, R. M. Feenstra et al. · Applied Physics Letters · 1999 · 68 citations

Compensation Effect, Engineering, Undoped Material +17

Superconducting InGaAs junction field-effect transistors with Nb electrodes

A. W. Kleinsasser, Thomas N. Jackson, D. T. McInturff et al. · Applied Physics Letters · 1989 · 67 citations

Normal Fets, Electrical Engineering, Josephson Junctions +13

Crossover from tunneling to metallic behavior in superconductor-semiconductor contacts

A. W. Kleinsasser, Thomas N. Jackson, D. T. McInturff et al. · Applied Physics Letters · 1990 · 65 citations

Superconducting Material, Electrical Engineering, Semiconductor Device +12